1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

Sep 16 - Sep 19, 1997ACT CITY Hamamatsu, Hamamatsu, Japan
International Conference on Solid State Devices and Materials
1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

Sep 16 - Sep 19, 1997ACT CITY Hamamatsu, Hamamatsu, Japan

[D-2-6]Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surfaces and Behavior of Surface Recombination Velocity

B. Adamowicz, T. Saitoh, T. Hashizume, H. Hasegawa(1.Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University, 2.Institute of Physics, Silesian Technical University)
https://doi.org/10.7567/SSDM.1997.D-2-6