1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
[A-1-1]High Performance n/p Junction Characteristics Using High Temperature RTA in Conjunction with H2 Treatment
S. Miyazaki, K. Hamada, T. Kitano(1.ULSI Device Development Laboratories, NEC Corporation)
