1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
[A-1-2]Lateral Diffusion Distance Measurement for 40-80 nm Junctions by Etching/TEM-EELS Method
Y. Kunimune, N. Nishio, N. Kodama, H. Kikuchi, T. Toda, A. Mineji, S. Shishiguchi, S. Saito(1.ULSI Device Development Laboratories, NEC Corporation)
