1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
[A-1-4]Boron Segregation to {311} Defects Induced by Self-Implantation Damage in Si
Jianxin Xia, Tomoya Saito, Ryangsu Kim, Takenori Aoki, Yoshinari Kamakura, Kenji Taniguchi(1.Department of Electronics and Information Systems, Osaka University)
