1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
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International Conference on Solid State Devices and Materials
1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan

[A-1-5]Hydrogen-Enhancing Boron Penetration in P-MOS Devices during SiO2 Chemical Vapor Deposition

Takayuki Aoyama, Kunihiro Suzuki, Hiroko Tashiro, Yoko Tada, Yuji Kataoka, Hiroshi Arimoto, Kei Horiuchi(1.Fujitsu Laboratories Ltd.)
https://doi.org/10.7567/SSDM.1998.A-1-5
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