1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
[A-1-6]Quantitative Evaluation of Dopant Loss in Low Energy As Implantation for Low-Resistive, Ultra Shallow Source/Drain Formation
M. Koh, K. Egusa, H. Furumoto, K. Shibahara, S. Yokoyama, M. Hirose(1.RCNS, Hiroshima University)
