1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
[A-2-2]Self-Limiting Atomic-Layer Selective Deposition of Silicon Nitride by Temperature-Controlled Method
Kenji Ooba, Yoshimitsu Nakashima, Anri Nakajima, Shin Yokoyama(1.Research Center for Nanodevices and Systems, Hiroshima University)
