1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
[A-2-3]Ultra-Low-Temperature Formation of Si Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment
Yuji Saito, Katsuyuki Sekine, Masaki Hirayama, Tadahiro Ohmi(1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University)
