1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
[A-2-5]Formation of Very Thin Epitaxial Al2O3 Pre-Layer with Very Smooth Surface on Si(111) Using Protective Oxide Layer
Young-Chul Jung, Hiroyuki Miura, Makoto Ishida(1.Department of Electric and Electronic Engineering, Toyohashi University of Technology)
