1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
[B-1-2]Trap Assisted Leakage Mechanism of 'worst' Junction in Giga-bit DRAM Using Negative Word-Line Voltage
Hiroshi SUZUKI, Manabu KOJIMA, Yasuo NARA(1.Fujitsu Laboratories Ltd.)
