1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
[B-1-3]Silicide-Extension Technology for High-Density Embedded SRAM Cells in 0.18um-CMOS Generation and Beyond
K. Matsui, K. Noda, K. Inoue, T. Itani, H. Iwasaki, T. Yoshii, T. Tanigawa(1.ULSI Device Development Laboratory, NEC Corporation)
