1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
[B-1-4]Optimization of Giga-bit DRAM Cell Transistors by Channel and Drain Engineering
M. Kojima, H. Suzuki, T. Miyashita, H. Anzai, T. Nagata, K. Takahashi, M. Sato, Y. Nara(1.Fujitsu Laboratories Ltd.)
