1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
[B-2-3]Electrical Properties of (Ba, Sr)TiO3 Films on Ru Bottom Electrodes Prepared by ECR Plasma CVD at Extremely Low Temperature and RTA
Shuji SONE, Reiko AKAHANE, Koji ARITA, Hisato YABUTA, Shintaro YAMAMICHI, Masaji YOSHIDA, Yoshitake KATO(1.ULSI Device Development Laboratories, NEC Corporation, 2.Fundamental Research Laboratories, NEC Corporation)
