1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
[C-1-6]GaAs Nanocrystals Fabricated by Ga and As Ion Implantation
Y. Kanemitsu, S. Mimura, S. Okamoto, K. S. Min, H. A. Atwater(1.Graduate School of Materials Science, Nara Institute of Science and Technology, 2.Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology)
