1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
[C-2-4]Fabrication of High-Resolution and High-Aspect-Ratio Pattering on a Stepped Substrate by Scanning Probe Lithography Using a Multilayer-Resist System
Masayoshi Ishibashi, Nami Sugita, Seiji Heike, Hiroshi Kajiyama, Tomihiro Hashizume(1.Advanced Research Laboratory, Hitachi, Ltd.)
