1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
[D-1-3]RF Noise Study of Small Gate Width Si-MOSFETs up to 8GHz Application for Low Power Consumption
E. Morifuji, C. E. Biber, W. Bachtold, T. Ohguro, T. Yoshitomi, H. Kimijima, T. Morimoto, H. S. Momose, Y. Katsumata, H. Iwai(1.Toshiba Corporation, 2.Swiss Federal Institute of Technology (ETH))
