1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
[D-2-2]Noticeable Enhancement of Edge Effect in Short Channel Characteristics of Trench-Isolated MOSFETs
Toshiyuki Oishi, Katsuomi Shiozawa, Akihiko Furukawa, Yuji Abe, Yasunori Tokuda(1.Advanced Technology R&D Center, Mitsubishi Electric Corporation)
