1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
[D-2-3]Stress-Induced Device Degradation Due to Die-Attach Process after Area Bump Formation
Nobuhiro Shimoyama, Katsuyuki Machida, Masakazu Shimaya, Hakaru Kyuragi(1.NTT System Electronics Laboratories)
