1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
[D-2-4]Oxide Thickness Dependence of Hot Carrier Stress Induced Drain Leakage Current Degradation in Thin-Oxide n-MOSFET's
Tahui Wang, N. K. Zous, L. Y. Huang, C. K. Yeh, T. S. Chao(1.Department of Electronics Engineering, National Chiao-Tung University, 2.National Nano Devices Lab.)
