1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
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International Conference on Solid State Devices and Materials
1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan

[D-2-5]Enhanced-Mobility Deep Submicron Strained-Si n-MOSFETs

Kern Rim, Judy L. Hoyt, James F. Gibbons(1.Solid State Electronics Laboratory, Stanford University)
https://doi.org/10.7567/SSDM.1998.D-2-5
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