1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
[D-2-6]Performance Considerations in Using High-k Dielectrics for Deep Sub-Micron MOSFETs
A. Inani, V. Ramgopal Rao, B. Cheng, M. Cao, P. V. Voorde, W. Greene, J. C. S. Woo(1.EE Department, University of California, 2.ULSI Research Laboratory, Hewlett-Packard Laboratories)
