1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
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International Conference on Solid State Devices and Materials
1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan

[LA-1]Buried Insulator Engineering for sub-0.05μm Fully-Depleted SOI-MOSFET to Reduce the Drain Induced Barrier Lowering

Risho Koh(1.Silicon systems research laboratory, NEC Corporation)
https://doi.org/10.7567/SSDM.1998.LA-1
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