1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
1998 International Conference on Solid State Devices and Materials
Sep 7 - Sep 10, 1998International Conference Center Hiroshima, Hiroshima, Japan
[LA-3]Improvement of SiO2/4H-SiC Interface by Using High Temperature Hydrogen Annealing at 1000℃
Kenji Fukuda, Kiyoko Nagai, Toshihiro Sekigawa, Sadafumi Yoshida, Kazuo Arai, Masahito Yoshikawa(1.New Energy and Industrial Technology Development Organization, Electrotechnical Laboratory, 2.Japan Atomic Energy Research Institute)
