1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan

[A-1-1]Effects of the Scaling on n+/p Junction Leakage Characteristics

T. Fukai, K. Takeuchi, T. Mogami(1.ULSI Research Lab., Silicon Systems Research Labs., NEC)
https://doi.org/10.7567/SSDM.1999.A-1-1
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