1999 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
1999 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
[A-1-3]Characteristics of Dual Polymetal (W/WNx/Poly-Si) Gate CMOS for 0.1 μm DRAM Technology
Yong-Hae Kim, Sung-Keun Chang, Seon-Soon Kim, Jun-Gi Choi, Sang-Hee Lee Dae-Hee Hahn, Hyung-Duck Kim(1.Semiconductor Advanced Research Division, Hyundai Electronics Industries)
