1999 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
1999 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
[A-1-4]A New Observation of the Width Dependent Hot Carrier Effect in Shallow-Trench-Isolated P-MOSFET's
Steve S. Chung, W.-J. Yang, C.-M. Yih, J.-J. Yang(1.Department of Electronic Engineering, National Chiao Tung University, 2.Worldwide Semiconductor Manufacturing Co.)
