1999 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
1999 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
[A-1-5]Stress Induced Subthreshold Current Hump in Short Gate-Length pMOSFET's with Shallow Trench Isolation
L. P. Chiang, L. Y. Huang, N. K. Zous, Tahui Wang(1.Department of Electronics Engineering, National Chiao-Tung University)
