1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan

[A-2-1]Transport Properties in Sub-10-nm-gate EJ-MOSFETs

Hisao Kawaura, Toshitsugu Sakamoto, Toshio Baba(1.Fundamental Research Laboratories, NEC Corporation)
https://doi.org/10.7567/SSDM.1999.A-2-1
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