1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan

[B-2-1]Oxide Mediated Solid Phase Epitaxy (OMSPE) of Silicon: A New Low Temperature Epitaxy Technique Using Intentionally Grown Native Oxide

I. Mizushima, Y. Mitani, K. Miyano, S. Kambayashi(1.Microelectronics Engineering Laboratory, R&D Center, Toshiba Corporation)
https://doi.org/10.7567/SSDM.1999.B-2-1
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