1999 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
1999 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
[B-2-2]High Performance Buried Channel-pFETs Using Elevated Source/Drain Structure with Self-Aligned Epitaxial Silicon Sliver (SESS)
J. H. Lee, S. C. Lee, N. Y. Kwak, I. S. Yeo, C. Y. Yeom, S. Ritterbush, S. K. Lee, C. T. Kim(1.Semiconductor Advanced Research Div., HYUNDAI Electronics Industries Co., 2.Applied Materials Korea, 3.Applied Materials)
