1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan

[B-2-4]Novel Impurity Activation Technology Using Gate Poly-Si Oxidation

N. Morosawa, H. Kotaki, S. Kakimoto, M. Yamanaka, K. Ohta, N. Hashizume(1.Advanced Technology Research Laboratories, Sharp Corporation)
https://doi.org/10.7567/SSDM.1999.B-2-4
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