1999 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
1999 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
[B-2-5]The Device Degradation Due to Contamination from STI Filling Material
S. J. Hong, M. H. Park, S. H. Hong, H. K. Kang, S. I. Lee(1.Semiconductor R&D Center, Samsung Electronics Co., Ltd.)
