1999 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
1999 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
[C-1-4]The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metal Organic Vapor Phase Epitaxy
Shigeo Yamaguchi, Michihiko Kariya, Shugo Nitta, Hiroshi Amano, Isamu Akasaki(1.Department of Electrical and Electronic Engineering, Meijo University, 2.High-Tech Research Center, Meijo University)
