1999 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
1999 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
[C-1-5]Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
Tokuharu KIMURA, Seikoh YOSHIDA, Jun WU, Hiroyuki YAGUCHI, Kentaro ONABE, Yasuhiro SHIRAKI(1.Department of Applied Physics, The University of Tokyo, 2.Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., 3.Department of Electrical and Electronic Systems, Saitama University, 4.Research Center for Advanced Science and Technology (RCAST), The University of Tokyo)
