1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan

[C-2-1]Application of Pressure Grown GaN Substrates to Epitaxy

S. Porowski(1.High Pressure Research Center Polish Academy of Sciences)
https://doi.org/10.7567/SSDM.1999.C-2-1
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