1999 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
1999 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
[C-2-2]Growth of Bulk GaN Single Crystals by the Pressure-Controlled Solution Growth Method
Takayuki Inoue, Yoji Seki, Osamu Oda, Satoshi Kurai, Yoichi Yamada, Tsunemasa Taguchi(1.Central R&D Laboratory, Japan Energy Corporation, 2.Faculty of Engineering, Yamaguchi University)
