1999 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
1999 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
[C-2-3]Hydride Vapor Phase Epitaxy of GaN on NdGaO3 Substrate and Realization of Freestanding GaN Wafers with 2-inch Scale
Akihiro WAKAHARA, Takenori YAMAMOTO, Kouji ISHIO, Akira YOSHIDA, Youji SEKI, Osamu ODA(1.Dept. of Electrical and Electronic Eng., Toyohashi Univ. of Technology, 2.Central Research Lab., Japan Energy Co.)
