1999 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
1999 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
[C-2-5]Nitridation of GaP Surfaces by Rf Nitrogen Radicals and by ECR Nitrogen Plasma
Shin-Ya Ootomo, Tamotsu Hashizume, Hideki Hasegawa(1.Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University)
