1999 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
1999 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
[D-1-3]A High-Speed, Silicon-Based Few-Electron Memory Gain Cell
Andrew C. Irvine, Zahid A. K. Durrani, Haroon Ahmed(1.Microelectronics Research Centre, University of Cambridge, Cavendish Laboratory)
