1999 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
1999 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
[D-2-2]Experimental Analysis of Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
Ryuji Ohba, Naoharu Sugiyama, Junji Koga, Ken Uchida, Akira Toriumi(1.Advanced LSI Technology Laboratory, TOSHIBA Corporation)
