1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

Sep 21 - Sep 24, 1999Nihon Toshi Center Kaikan, Tokyo, Japan

[D-3-4]The Multi-Tunnel Junction Single Electron Memory: Architecture and Simulation

Lionel Palun, Jacques Gautier(1.Laboratoire d'Electronique, de Technologie et d'Instrumentation, Commissariat a l'Energie Atomique)
https://doi.org/10.7567/SSDM.1999.D-3-4
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