2000 International Conference on Solid State Devices and Materials
Aug 29 - Aug 31, 2000Sendai International Center, Sendai, Japan
2000 International Conference on Solid State Devices and Materials
Aug 29 - Aug 31, 2000Sendai International Center, Sendai, Japan
[A-1-2]New Mechanisms and the Characterization of Plasma Charging Enhanced Hot Carrier Effect in Deep-Submicron N-MOSFET's
S. J. Chen, H. L. Kao, Steve S. Chung, C. C. Chen, C. Y. Chang, H. C. Lin(1.Department of Electronic Engineering, National Chiao Tung University, 2.National Nano Device Lab.)
