2000 International Conference on Solid State Devices and Materials
Aug 29 - Aug 31, 2000Sendai International Center, Sendai, Japan
2000 International Conference on Solid State Devices and Materials
Aug 29 - Aug 31, 2000Sendai International Center, Sendai, Japan
[A-2-4]Copper Ion Drift Rates in Porous Methylsilsesquiazane Dielectric Films
S. Mukaigawa, T. Oda, T. Aoki, Y. Shimizu, T. Kikkawa(1.Research Center for Nanodevices and Systems, Hiroshima University, 2.Tonen Corporation)
