2000 International Conference on Solid State Devices and Materials

2000 International Conference on Solid State Devices and Materials

Aug 29 - Aug 31, 2000Sendai International Center, Sendai, Japan
International Conference on Solid State Devices and Materials
2000 International Conference on Solid State Devices and Materials

2000 International Conference on Solid State Devices and Materials

Aug 29 - Aug 31, 2000Sendai International Center, Sendai, Japan

[B-1-4]Surface Channel Metal Gate CMOS with Light Counter Doping and Single Work Function Gate Electrode

K. T. Nishinohara, Y. Akasaka, T. Saito, A. Yagishita, A. Murakoshi, K. Suguro, T. Arikado(1.Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.)
https://doi.org/10.7567/SSDM.2000.B-1-4