2000 International Conference on Solid State Devices and Materials
Aug 29 - Aug 31, 2000Sendai International Center, Sendai, Japan
2000 International Conference on Solid State Devices and Materials
Aug 29 - Aug 31, 2000Sendai International Center, Sendai, Japan
[B-1-5]High Density 0.16 μm Embedded-DRAM-ASIC Process Technology for a SoC Platform
J. Ida, H. Tanaka, K. Fukuda, M. Takeda, H. Shinohara, N. Nakayama, E. Seo, K. Yoshida, H. Higashino, Y. Miyakawa, M. Kageyama, Y. Harada, M. Matsumoto, T. Inoue, F. Yokoyama(1.LSI Production Division, VLSI R&D Center, LSI Division, OKI Electric Industry Co., Ltd.)
