2000 International Conference on Solid State Devices and Materials
Aug 29 - Aug 31, 2000Sendai International Center, Sendai, Japan
2000 International Conference on Solid State Devices and Materials
Aug 29 - Aug 31, 2000Sendai International Center, Sendai, Japan
[B-1-7]Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current
Naruhisa Miura, Yuji Abe, Kohei Sugihara, Toshiyuki Oishi, Taisuke Furukawa, Takumi Nakahata, Katsuomi Shiozawa, Shigemitsu Maruno, Yasunori Tokuda(1.Advanced Technology R&D Center, Mitsubishi Electric Corporation)
