2000 International Conference on Solid State Devices and Materials
Aug 29 - Aug 31, 2000Sendai International Center, Sendai, Japan
2000 International Conference on Solid State Devices and Materials
Aug 29 - Aug 31, 2000Sendai International Center, Sendai, Japan
[B-2-3]Comparison of Sub-Bandgap Impact Ionization in Deep-Sub-Micron Conventional and Lateral Asymmetrical Channel nMOSFETs
Anil K. G., S. Mahapatra, V. Ramgopal Rao, I. Eisele(1.Institute of Physics, Universitat der Bundeswehr Munich, 2.Department of Electrical Engineering, Indian Institute of Technology)
