2000 International Conference on Solid State Devices and Materials
Aug 29 - Aug 31, 2000Sendai International Center, Sendai, Japan
2000 International Conference on Solid State Devices and Materials
Aug 29 - Aug 31, 2000Sendai International Center, Sendai, Japan
[B-2-5]Improved Low Temperature Characteristics of Raised Source and Drain (RSD) Si1-x Gex PMOSFET's
H. J. Huang, K. M. Chen, T. Y. Huang, G. W. Huang, C. Y. Chang(1.Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, 2.National Nano Device Laboratories)
