2000 International Conference on Solid State Devices and Materials
Aug 29 - Aug 31, 2000Sendai International Center, Sendai, Japan
2000 International Conference on Solid State Devices and Materials
Aug 29 - Aug 31, 2000Sendai International Center, Sendai, Japan
[D-1-3]High Performance MOS Tunneling Cathode with CoSi2 Gate Electrode
T. Sadoh, Y. Zhang, H. Yasunaga, A. Kenjo, T. Tsurushima, M. Miyao(1.Department of Electronics, Kyushu University)
