2001 International Conference on Solid State Devices and Materials
Sep 26 - Sep 28, 2001Diamond Hotel, Tokyo, Japan
2001 International Conference on Solid State Devices and Materials
Sep 26 - Sep 28, 2001Diamond Hotel, Tokyo, Japan
[A-2-6]A Thermally Robust Ti-Rich TiNx Contact Metallization Realizing an Interconnect System Suitable to 0.10-μm DRAMs and Beyond
Isamu Asano, Yoshitaka Nakamura, Hideo Aoki, Naoki Fukuda, Satoru Yamada, Toshihiro Sekiguchi(1.ELPIDA MEMORY, Inc., 2.Device Development Center, Hitachi Ltd., 3.Semiconductor Group, Hitachi Ltd.)
